Intel shared performance metrics for its upcoming 14A process node and teased its new Turbo Cell technology, a customizable ...

Abstract: The conventional complementary field-effect transistor (CFET) static random access memory ... in write performance over 4P2N and 48.1% over 4N2P. In the case of fast NMOS/slow PMOS (FNSP) ...

In this work, we compute numerically the gate oxide capacitance of nanosheet transistors and, observing a nonnegligible discrepancy with the planar model, we propose a simple model that better ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

China unveils a microscopic transistor that could quietly disrupt the global chip race. Built without silicon, this atom-thin innovation hints at a radical shift in processor design. This complete 360 ...

School of Integrated Technology, Yonsei University, Seoul 03722, Republic of Korea BK21 Graduate Program in Intelligent Semiconductor Technology, Yonsei University, Incheon 21983, Republic of Korea ...

The included process monitor provides information on process variation of core PMOS and NMOS transistors, as well as I/O PMOS and NMOS devices. As customers develop products on advanced 3nm process ...

School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Key Laboratory of Flexible Electronics, Jiangsu National Synergetic Innovation Center for Advanced Materials, ...

NUS scientists have made a standard silicon transistor mimic brain functions, paving the way for efficient, scalable AI hardware using existing chip technology. NUS researchers have shown that a ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...