onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar ...

High Temperature Storage Test: Here, drivers are evaluated at temperatures around 125±3°C without power for periods ranging from 2 to 1000 hours. This test assesses the long-term stability of the ...

Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced the launch of two new 6th-generation ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

Credit: CGD The Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximising efficiency and offering a cost-effective alternative to ...

Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for ...

To date, commercially available high power GaN transistors generally range from 600 to 650 volts, with the only 900V GaN device available from Transphorm. Transphorm’s core product portfolio is ...