Take a look at some of the smallest and most advanced microelectronic innovations pushing the boundaries of size, speed, and ...

A novel nanocomposite transistor boosts glucose sensing performance, integrating MOF-MoS2 nanosheets and machine learning for ...

Technological innovations in power electronics are not only essential for the success of the energy transition, they also ...

Abstract: Artificial neural network-based gallium nitride high-electron-mobility transistor (ANN-based GaN HEMT) models have garnered significant attention due to their high accuracy, low development ...

College of Big Data and Information Engineering, Guizhou University, Huaxi Road, Huaxi District, Guiyang, Guizhou550025, P. R. China Engineering Research Center of Semiconductor Power Device ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) maintain consistent performance when ...

Reference: “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” by Meiyong Liao, Huanying Sun and Satoshi Koizumi, 19 January 2024, ...

Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, P. R. China ...

Abstract: A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on ...

Data shows Diamond+ players overwhelmingly prefer tanks with shields over those with mobility abilities. Magneto and Doctor Strange dominate high-level play with pick rates exceeding 35%, while Venom ...