A High Electron Mobility Transistor (HEMT) is a field-effect transistor that employs a junction between two materials with differing bandgaps (commonly GaN or GaAs) to establish a high-mobility ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

and found that electron mobility in those transistors can be surprisingly high. "For four decades, researchers have struggled to search for solid state 2D electron gas (2DEG) that exhibit ...

Quantum technology will fundamentally change the landscape in finance, medicine, and fusion research, among other fields. But ...

Abstract: This article presents a physics-based analytical model for the drain current of normally-OFF p-GaN/ AlGaN/GaN high electron mobility transistors (HEMTs). The core model, the first of its ...

Abstract: A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on ...

Reference: “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” by Meiyong Liao, Huanying Sun and Satoshi Koizumi, 19 January 2024, ...

and high-resolution scanning transmission electron microscopy. Building on this finding, the group created a novel device called a self-gated ferroelectric field-effect transistor (SF-FET), which ...