One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

This article explores the differences between inverters based on silicon power devices ... suitable for low- to medium-power applications such as consumer electronics, data centers, and power supplies ...

Energy is always about balance and time. In this way, it’s fitting that the solution to the on-grid versus off-grid question ...

But inside its aluminum alloy housing is an integrated GaN power supply delivering up to 232W of combined power output, so you won’t have to deal with a chunky power brick or a bulky adapter.

SemiQ has released three 1.2kV three-phase silicon carbide mosfet bridges in 62.8 x 33.8 x 15mm press-fit six-pack modules. 20mΩ 263W GCMX020A120B2T1P 40mΩ 160W GCMX040A120B2T1P 80mΩ 103W ...

With its integration of Gallium Nitride (GaN) power supply technology, the dock eliminates bulky power adapters while offering up to 232 watts of total power output and 250 watts of total power input.

With its integration of Gallium Nitride (GaN) power supply technology, the dock eliminates bulky power adapters while offering up to 232 watts of total power output and 250 watts of total power input.