Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

CML Micro’s single- and two-stage GaAs power amplifiers target a range of dual-cell lithium battery-powered wireless devices.

W GaN converter from STMicroelectronics targets fast chargers, adapters, and power supplies for home appliances.

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for ...

This article highlights effective design practices for gallium nitride (GaN) half-bridge converters driven by a 100 V ...

Gallium nitride (GaN) on silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) power amplifiers stand out, offering exceptional power efficiency, thermal management, and operational ...