Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

IQE plc and X-FAB Silicon Foundries SE have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.

STMicroelectronics is reshaping its manufacturing footprint as part of a program it announced in October 2024 to ensure the long-term sustainability of the company across technology R&D, design and ...

C3330C STMicroelectronics details company-wide program to reshape manufacturing footprint and resize global cost base Increasing efficiency, automation, and AI will strengthen ST's key technology ...

Building 300mm silicon megafabs in Agrate and Crolles The Agrate ... and it will also remain a center of competence for GaN, mainly on epitaxy. The Tours site will also host a new activity: ...

The consortium project, led by Ferdinand-Braun-Institut (FBH) in Berlin, aims to demonstrate a fully independent European supply chain, from silicon carbide (SiC) substrates, gallium nitride (GaN) ...

to address the challenges of growing Gallium Nitride (GaN) films on Silicon (Si). This project aims to create the world’s first GaN transistors and test data from wafers e LOS GATOS, CA ...

Gallium Nitride,Magnetron Sputtering,Minimum Variance,Molecular Beam Epitaxy,Nitride Thin Films,Peak Intensity,Physical Vapor Deposition,Radio Frequency Magnetron Sputtering,Si Wafer,Silicon ...

The epitaxy ... s still the decade of IGBT and silicon for this high-power application. On the other side, SiC will start dominating already the business starting 2025. Now talking also about wide ...

One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

A research team from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences ...