One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

IMS 2025 is fast approaching. Let’s take a look at the show one publication calls “the global epicenter of microwave ...

New TPU; TSMC revenue, export investigation; global semi equipment sales; 2D materials roadmap; acquisitions; UALink spec; EU ...

Hence, to enable broadband THz PPFDs ... scheme is applied in a full H-band amplifier-doubler chain in 0.13-μm SiGe BiCMOS. The fabricated chain demonstrates up to 4.7-dBm saturated output power, 1.13 ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...