Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

High Temperature Storage Test: Here, drivers are evaluated at temperatures around 125±3°C without power for periods ranging from 2 to 1000 hours. This test assesses the long-term stability of the ...

Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced the launch of two new 6th-generation ...

onsemi has introduced the SPM 31 intelligent power module (IPM), its first generation of 1200V silicon carbide (SiC) metal ...

Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar ...

650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters. The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding ...

Credit: CGD The Combo ICeGaN combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximising efficiency and offering a cost-effective alternative to ...

has launched two new 6th-generation 650V Insulated Gate Bipolar Transistors (IGBTs) aimed at enhancing the efficiency of solar inverters. The announcement, made earlier this week, introduces the ...

This FAQ will take a few examples to illustrate how thermal interface materials conduct thermal management in power ...

Combo ICeGaN® combines smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive ...