A High Electron Mobility Transistor (HEMT) is a field-effect transistor that employs a junction between two materials with differing bandgaps (commonly GaN or GaAs) to establish a high-mobility ...

In Magellan, the Fraunhofer Institute for Applied Solid State Physics IAF is working on behalf of the European Space Agency (ESA) to develop high-electron mobility transistors (HEMTs) and ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator technology. The switch contains two free-wheeling diodes and can deliver ...

The research includes characterization of defect-origin electronic levels in GaN-based materials and their correlation with operation instabilities of devices, development of a novel ...

A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...

They have, in general, much higher electron mobility and conductivity ... Recently very-high-speed 85-nm InSb quantum-well transistors have been demonstrated at a low supply voltage of only ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

(PR) What’s New: At the IEEE International Electron Devices Meeting (IEDM) 2024, Intel Foundry unveiled new breakthroughs to help drive the semiconductor industry forward into the next decade ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...