College of Big Data and Information Engineering, Guizhou University, Huaxi Road, Huaxi District, Guiyang, Guizhou550025, P. R. China Engineering Research Center of Semiconductor Power Device ...

A High Electron Mobility Transistor (HEMT) is a field-effect transistor that employs a junction between two materials with differing bandgaps (commonly GaN or GaAs) to establish a high-mobility ...

A $550,000 grant has been awarded to the County of Ventura's Economic Vitality Unit to create an Advanced Air Mobility Innovation ... who will gain access to high-quality jobs and career pathways ...

“Knight in high-vis” Leon Thompson reckons the unexpected acclaim he’s received after a social media post praising him for stopping his truck and other traffic to help a woman and her ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

Reference: “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” by Meiyong Liao, Huanying Sun and Satoshi Koizumi, 19 January 2024, ...

High-power electronics based on wide- and ultrawide-bandgap ... In dynamic thermal management, we pioneered the concept of solid-state thermal transistors, enabling electrically controlled heat flow ...

Abstract: A series of switchable resonators are proposed by incorporating the parasitic effects of two gallium nitride (GaN) high electron mobility transistor (HEMT) devices in this letter, based on ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility Transistors) maintain consistent performance when operating within a well-defined range. These findings support the ...