A High Electron Mobility Transistor (HEMT) is a field-effect transistor that employs a junction between two materials with differing bandgaps (commonly GaN or GaAs) to establish a high-mobility ...

In Magellan, the Fraunhofer Institute for Applied Solid State Physics IAF is working on behalf of the European Space Agency (ESA) to develop high-electron mobility transistors (HEMTs) and ...

The research includes characterization of defect-origin electronic levels in GaN-based materials and their correlation with operation instabilities of devices, development of a novel ...

A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...