A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for ...

Gallium nitride (GaN) on silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) power amplifiers stand out, offering exceptional power efficiency, thermal management, and operational ...

audio amplifiers, and bridge circuits, especially in electric vehicles. SiC-based inverters improve energy efficiency, reduce waste heat, and increase the range of electric vehicles. Gate driver ...

This article highlights effective design practices for gallium nitride (GaN) half-bridge converters driven by a 100 V ...

Abstract: This article presents a novel structure for the recently reported divisional load-modulated balanced amplifier (DLMBA ... to extend the range of the output back-off of the entire circuit. A ...

Among these new products include integrated GaN ... circuit protection and power management IC reduces the solution size by half compared with existing hot-swap controllers in the market, eliminating ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

CML Micro’s single- and two-stage GaAs power amplifiers target a range of dual-cell lithium battery-powered wireless devices.

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

W GaN converter from STMicroelectronics targets fast chargers, adapters, and power supplies for home appliances.