A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for ...

Gallium nitride (GaN) on silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) power amplifiers stand out, offering exceptional power efficiency, thermal management, and operational ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

The best tech products announced this week include Bowers & Wilkins' next-gen headphones and some serious audiophile-grade ...

The headphone amplifier driving your wired headphones could be the difference between a good personal listening experience and a great one. You see, headphone amplifiers boast performance-first audio ...

Behind this transformation are innovations in Class-D amplifiers, GaN-based power solutions, and energy-optimized signal processing. These breakthroughs are changing the way audio systems deliver ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...

It offers industrial application-specific integrated circuits (ASICs ... and current-sense amplifiers; micro-electro-mechanical systems (MEMS) sensors, including accelerometers, gyroscopes ...

Advanced Linear Devices has introduced a voltage balancing IC for series-connected pairs of 3.3V supercapacitors. Inside is a pair of mosfet-like devices with a sharp ‘knee’ in their voltage-current ...

Abstract: A tradeoff between bandwidth and back-off range is commonly found in the Doherty power amplifier (DPA ... 2.9 GHz and with a 9-dB OBO range is designed and fabricated using GaN HEMT devices.