Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

By adopting proprietary diode and insulated gate bipolar transistor (IGBT) elements ... Electric will exhibit the XB Series HVIGBT module at Power Conversion Intelligent Motion (PCIM) Expo ...

SLIMDIP series’ first SiC modules offer high output and low power loss for energy-saving ... conducting insulated-gate bipolar transistor (RC-IGBT) SLIMDIP modules, these new SiC modules achieve ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new XB Series high-voltage insulated-gate bipolar transistor (HVIGBT) module, a 3.3k-volt, ...

Mitsubishi Electric's newly developed silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) chip is incorporated into both new SLIMDIP packages. Compared to current silicon ...