ONSEMI EliteSiC SPM 31 IPMs are firm’s first generation of 1200V silicon carbide (SiC) metal oxide semiconductor field-effect ...
CGD told Electronics Weekly. What efficiency gain will paralleled GaN transistors offer? “Compared to a silicon IGBT solution, Combo ICeGaN with 30% GaN and 70% IGBT for a standard 150kW 800A power ...
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