Still, actually realizing its benefits in commercial devices has been a challenge. As a general rule of thumb, power converters should be able ... 1: SEM darkfield images of GaN film (L) and GaN ...

Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are ...

Cambridge GaN Devices’s hybrid architecture for power modules combines gallium ... products will allow EV designers to enjoy GaN’s benefits in DC-DC converters, onboard chargers, and ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies ...

Every so often, a new technology comes along that offers a broad range of benefits over ... size is thanks to GaN semiconductors, which are able to run cooler at higher power levels than their ...

The companies have agreed on a joint development initiative on GaN ... Power & Discrete, MEMS and Sensors of STMicroelectronics declared: “ST and Innoscience are both Integrated Device ...

As GaN and SiC power technologies deliver faster ... performance, and high-power-density digital-power solutions. GigaDevice’s devices has been widely adopted across diverse sectors including power ...

In the next few years, such power supplies will play a crucial role in the high-end medical devices market." GaN technology drives the innovation of medical power supplies With the development ...

Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, today announced its adoption of ...

GaN Systems CEO Jim Witham will present two papers on the use of GaN power devices in automotive systems at Electronica nexts week. “Automotive is one of the central themes at Electronica, with a ...

That helps reduce the risk of unforeseen issues in the future. However, dynamically testing power devices based on gallium nitride (GaN) and silicon carbide (SiC) presents distinct challenges due ...