Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers ...

or GaN as a technology to drive the need for faster and faster charging speeds that neither damage the charger (heating can be an issue with speedy power delivery) or the receiving device’s battery.

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the ... and manufacturability advantages.” CGD will be exhibiting at APEC (Applied Power Electronics Conference and Exposition).

Every so often, a new technology comes along that offers a broad range of benefits over ... size is thanks to GaN semiconductors, which are able to run cooler at higher power levels than their ...

That helps reduce the risk of unforeseen issues in the future. However, dynamically testing power devices based on gallium nitride (GaN) and silicon carbide (SiC) presents distinct challenges due ...

or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN solution will revolutionise the EV industry by intelligently combining the benefits of GaN and silicon technologies ...