Essential Temperature Tests for IGBT Drivers: Ensuring Reliability in Extreme Conditions
High Temperature Storage Test: Here, drivers are evaluated at temperatures around 125±3°C without power for periods ranging from 2 to 1000 hours. This test assesses the long-term stability of the ...
EE World Online3d
Power components enhance efficiency in renewable energy systems
Magnachip Semiconductor Corporation announced the launch of two new 6th-generation (Gen6) 650V Insulated Gate Bipolar ...
Electronics Weekly6d
APEC: small GaN transistors improve EV IGBT traction inverters
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
Morningstar5d
Magnachip Launches Two New Gen6 650V IGBTs to Expand Its Solar Energy Power Product Lineup
650V Insulated Gate Bipolar Transistors (IGBTs), specifically designed for solar inverters. The newly introduced Gen6 IGBTs, incorporating polyimide insulation layers, demonstrate outstanding ...
pv magazine International2y
Mitsubishi Electric unveils power-switching transistor for solar
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for ...
New Electronics6d
CGD announces breakthrough 100kW+ technology
Cambridge GaN Devices' Combo ICeGaN boosts EV efficiency, blending GaN & IGBT for cost-effective 100kW+ powertrains.
Magnachip Launches Two New Gen6 650V IGBTs to Expand Its Solar Energy Power Product Lineup
Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced the launch of two new 6th-generation ...