A High Electron Mobility Transistor (HEMT) is a field-effect transistor that employs a junction between two materials with differing bandgaps (commonly GaN or GaAs) to establish a high-mobility ...

A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...

In Magellan, the Fraunhofer Institute for Applied Solid State Physics IAF is working on behalf of the European Space Agency (ESA) to develop high-electron mobility transistors (HEMTs) and ...