A step forward in the development of diamond CMOS integrated circuits. A research team at NIMS has developed the world’s ...

In Magellan, the Fraunhofer Institute for Applied Solid State Physics IAF is working on behalf of the European Space Agency (ESA) to develop high-electron mobility transistors (HEMTs) and ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor ...

The race beyond silicon is already underway. As these emerging semiconductor materials become more viable, they will enable ...

The key advantage of Bi₂O₂Se is its high electron mobility—280 cm²/Vs at these ... stacking these transistors vertically using a layered high-K native oxide. This could solve the ...

A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in high-power switching systems. What are GaN HEMTs and why are they important?

Their analysis reveals a strong overlap between these two ranges, confirming that GaN MISHEMTs remain stable within the ...

The DoD-funded project will enable the Whitacre College to form equipment, systems and tools critical to enhance wide/ultra-wide bandgap semiconductors’ capabilities.

imec, the research and innovation hub, has presented research that shows that despite their positive bias (on-state) ...