Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
can act as a suitable substrate for Al x Ga 1-x N epitaxy that may meet growing power needs. Substrate engineering can ...
Liquid-Phase Epitaxy (LPE) is a technique used ... This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, ...
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