Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

IQE, a supplier of compound semiconductor wafer products and advanced material solutions, and X-FAB Silicon Foundries, the specialty foundry, have announced a Joint Development Agreement (JDA) to ...

A research team from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences ...

IQE plc and X-FAB Silicon Foundries SE have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.

STMicroelectronics is reshaping its manufacturing footprint as part of a program it announced in October 2024 to ensure the ...

Leti, a leading European semiconductor research institute, outlined ambitious strategies to address critical AI hardware ...

STMicroelectronics plans to reshape its global manufacturing footprint, prioritizing investments in future-ready ...

Type-I heterojunctions are commonly formed using materials like gallium nitride (GaN) and gallium arsenide (GaAs ... such as atomic layer deposition (ALD) and molecular beam epitaxy (MBE), allow for ...

Wide-bandgap materials also allow for smaller, faster, more reliable, and more energy-efficient power electronic components ...