Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

Attempts to boost power density become a juggling act to get the most functionality into the least space while managing ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 This allows for the development of smaller, more energy-efficient components compared to ...