Attempts to boost power density become a juggling act to get the most functionality into the least space while managing ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 This allows for the development of smaller, more energy-efficient components compared to ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

That compact size is thanks to GaN semiconductors ... which helps pass heat from the hottest components to the charger’s case. [Brian] is able to guide us through the circuit, and he identified ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...